Atomic structure of pressure-induced amorphous semiconductors

The paper will briefly review and discuss results of our investigations on the atomic correlations in amorphous Zn-Sb, GaSb, GaSb-Ge and Al-Ge alloys. These semiconductor alloys were prepared by solid state reactions in the course of heating the quenched highpressure phases. Structure of the final products was studied by neutron diffraction for the Al-Ge, GaSb and GaSb-Ge alloys and by transmission electron microscopy for the Al-Ge and Zn-Sb ones. The experimental data obtained were used for reverse Monte Carlo atomic structure modelling of these alloys. The samples thus obtained were proved to be homogeneous bulk amorphous materials containing no crystalline inclusions.